to-220 parameter symbol value unit collector-base voltage v c b o 200 v collector-emitter voltage v c e o 120 v emitter-base voltage v e b o 8.0 v collector current i c 7.0 a base current i b 3.0 a total dissipation at p t o t 50 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c 2SC3834 description parameter symbol test conditions min. typ. max. unit collector cut-off current i c b o v c b =200v, i e =0 0.1 ma emitter cut-off current i e b o v e b =8v, i c =0 0.1 ma collector-emitter sustaining voltage v c e o i c =50ma, i b =0 120 v dc current gain h f e ( 1 ) v c e =4v, i c =0.3a 100 h f e ( 2 ) v c e =4v, i c =3.0a 70 220 collector-emitter saturation voltage v c e ( s a t ) i c =3.0a,i b =300ma 0.5 v base-emitter saturation voltage v b e ( s a t ) i c =3.0a,i b =300ma 1.2 v current gain bandwidth product f t v c e =12v,i c =500ma 10 mhz silicon npn triple diffused planar transistor product specification it is intented for use in power amplifier and switching applications. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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